MIT/Lincoln Labs CCID20 W93C2 CCD Test Results

This is a phase 2 MIT/Lincoln Labs 2Kx4K CCD employing the new backside boron implant and laser anneal process that improves QE spatial uniformity. This is a 300 ohm-cm epi CCD. Testing of this device was done by Lloyd Robinson.

A summary report is available. Noteworthy points about this CCD include:

Original postscript files are available from our anonymous ftp server and these provide better resolution and clarity than is usually possible on a web page. Here are a few figures to illustrate device highlights:

Hot Column
One hot column is created by a hot pixel somewhere along the column.
Serial and Parallel CTE
CTE measurements are very good.
Surface flatness
Surface flatness is good.


The hot column shown in this image might be reduced by proper manipulation of the parallel clocks. We have not tested this possibility.


The Lincoln CCID20 design produces excellent charge transfer efficiency. This is illustrated in the following plot of serial charge transfer efficiency. The measured CTE is 0.9999986. Parallel CTE is indistinguishable from 1.000000.


The surface flatness was measured with the UCO/Lick surface flatness measuring machine. Peak-to-peak variation is about 10 µm.


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