MIT/Lincoln Labs CCID20 W93C2 CCD Test Results
This is a phase 2 MIT/Lincoln Labs 2Kx4K CCD employing
the new backside boron implant and laser anneal process that improves QE
spatial uniformity. This is a 300 ohm-cm epi CCD. Testing of this device
was done by Lloyd Robinson.
A summary report is available.
Noteworthy points about this CCD include:
- The new backside processing gives this device better
QE uniformity than the phase 1 CCDs.
- Only the A amplifier is working.
- One very bright column is present.
- Other characteristics (QE, read noise, full well, etc.)
as shown in the summary report are typical.
Original postscript files are available from our anonymous
ftp server and these provide better resolution and clarity than is
usually possible on a web page. Here are a few figures to illustrate device
highlights:
- Hot Column
- One hot column is created by a hot pixel somewhere along
the column.
- Serial and Parallel CTE
- CTE measurements are very good.
- Surface flatness
- Surface flatness is good.
The hot column shown in
this image might be reduced by proper manipulation of the parallel clocks.
We have not tested this possibility.

The Lincoln CCID20 design
produces excellent charge transfer efficiency. This is illustrated in the
following plot of serial charge transfer efficiency. The measured CTE is
0.9999986. Parallel CTE is indistinguishable from 1.000000.

The surface flatness
was measured with the UCO/Lick surface flatness measuring machine. Peak-to-peak
variation is about 10 µm.
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