Characterization of MITLL
	CCID20-W91c2
	thin 2k x 4k
	pixel size 15um x 15um
	hz, new coating and annealing
	Reported by M.Wei 	Jul.9,1998

Both "R"(A) and "L"(B) amps worked 

TEST CONDITIONS

temperature:    -130c
Voltages:	Vdd 	= +19v
		Vr  	= +12.5v
		Vopg 	= 0v
		Vsub	= 0v
		Vp1,2,3 = +2, -6v
		Vs1,2,3 = +6, -3v
          	Vsw	= +5, -5v
		RG	= 10, 0v
		SCP	= 10v

read 3800(r)x2048(c) area only.
changed gain of preamp. from 21 to 4.83

TEST RESULTS

e-/DN:	        R:	0.48		Determined by Fe55 x-ray test
		L:	0.44
serial CTE	R:	0.99998384	Determined by Fe55 x-ray test
		L:	0.99999006	Determined by Fe55 x-ray test


vertical CTE		0.99999988	Determined by cosmic ray

Vertical charge traps:	0		(in 2048(r) x 2048(c) area) Determined
					by charge-pumping method

Read noise:		R: 2.16e-	DSC timing: 16us on data and 16us 
					on baseline
			   2.83e-	DSC timing: 4us on data and 4us 
					on baseline
			L: 2.38e-	DSC timing: 16us on data and 16us 
					on baseline
			   2.77e-	DSC timing: 4us on data and 4us 
					on baseline
Full well(nonmpp)	111 ke- 

Dark current:				Measured from 1000s integration
	(nonmpp)	 1.4e-/hour/pixel (@-110c)


QE(%)
		-124c	
3200A		 8.0
3500A		10.4	
4000A		39.5
4500A		49.0
5000A		57.6
6000A		70.0
6500A		75.4
7000A		75.3
8000A		61.6
9000A		34.2	
10000A		 5.7

Fringing
 8000A		6.9%
 9000A		10.0%
10000A		17.1%
 
---------------------------------------------
Spurious Charges(e-) --Vertical voltages
(from a 1sec. dark field)
		Vv=2,-6	vv=2,-8	vv=2,-10
top of CCD	0	3.0	7.0
mid of CCD	0	4.4	17.6
bot of CCD	0	5.4	27.4

Residual image -- vertical voltage 
(after 60*12ke- exposure then took 1000sec. dark field)
Vv=2,-6	 5.52-0.24=5.28(e-)
Vv=2,-8	 6.96-5.76=1.20(e-)

QE variations(%)
3200A	49.2
3500A	50.1
4000A	 8.2
4500A	 5.3