This is the first MIT/Lincoln Labs 2Kx4K CCD we've seen with the new and improved boron implant and laser anneal process. The QE non-uniformity has been reduced at most wavelengths. This is a high-resistivity CCD.
A summary report is available. Noteworthy points about this CCD include:
Original postscript files are available from our anonymous ftp server and these provide better resolution and clarity than is usually possible on a web page. Here are a few figures to illustrate device highlights:


The data for these curves were obtained by taking a flat field image at each of the indicated wavelengths and measuring the amplitude of the quantum efficiency variations. The percents shown are derived by taking a single row cut through the image and computing a percentage as (MAX-MIN)/MEAN. Obviously this emphasizes maximum variations and different results will be obtained if a different row is selected. But the general reduction in the amplitude of the variation seen in W62C2, compared to the old process used with W67C1, is clear.

This plot shows how the QE variations change with temperature. A more detailed look at the CCD helps interpret this plot. That analysis shows that just the least-sensitive areas of the CCD increase in sensitivity. This results in a decrease of (MAX-MIN). Other parts of the CCD which show lesser QE variations don't change much, if any, with temperature.

These two plots show the surface shape at room temperature. The same data are show, but in different perspectives.
