MIT/Lincoln Labs CCID20 W64C1 CCD Test Results

This is a high resistivity, thinned, backside MIT/Lincoln Labs 2Kx4K CCD. It is very similar to other high resistivity CCID20s tested at Lick.

A summary report is available. Noteworthy points about this CCD include:

CTE. Near perfect CTE is achieved using the serial and parallel clocks which generate low spurious charge. This is typical of Lincoln CCDs.

Original postscript files are available from our anonymous ftp server and these provide better resolution and clarity than is usually possible on a web page. There are also additional postscript files showing CTE measurements, fringing, and the brick-wall pattern. Check the INDEX file for a description of what the other files contain. Here are a few figures to illustrate device highlights:

QE curve: This is a pretty typical QE curve for the high resistivity CCID20s. Good red response is achieved by the 40 µm thick epi.
Serial CTE: Near perfect CTE is achieved by the Lincoln CCD design.
Surface plot: Hasn't been measured yet.
Fringing: This 9000Å fringing pattern is seen in many CCID20s.

This plot shows the QE measurements made at about -129°C.

Graph of QE.

The Lincoln CCID20 design produces excellent charge transfer efficiency. This plot shows a test of serial CTE using Fe⁵⁵ xrays. Both parallel and serail CTE are at least 0.999999 per pixel transfer.

No surface contour images yet...

This 9000Å fringe pattern is seen in many CCID20s. There is a circular pattern which is apparently centered on the wafer and a more random pattern on top of that. The circular pattern is only a fraction of a percent in amplitude and in this CCD the random pattern has about a 10% amplitude, which is quite reasonable.

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