Dewar name:     MOS red
Uses:           MOS
Date:           Feb.26, 1997 
CCD:            Lick3 Loral 2048x2048 Thin 
                15 u-meter pixels L4-w15-1(0,1)
Amp.:           BR
Temperature:    -120c(improved cooler)?

Voltages:
 Vdd=21.5 Vopg= -1.0 V2= 2.  Vh= 4.7 V1= 2.  Vw= 5.  Vt= 2.  R= 6.
  VR=13.0 Vsub= 0.      -8.0    -5.2    -8.0    -5.     -8.0   -2.

e-/DN:          1.05(BR)(in MOS red dewar and Lick controller(noise test)
                photon transfer curve method = 0.93 (BR)(in MOS RED dewar)

Noise:          BR:     5.2*1.05 = 5.5 e-(sample time=16us)
                BR:     11.5*0.93 = 10.7e- (Vh=4.7,-5.2 in MOS RED dewar,Leach)

CTE:            

Traps:          36 (B direction)

Dark current:   1000sec. at -140c: 0.5e-(in MOSRED dewar)mpp
                1000sec. at -140c: 0.5e-(in MOSRED dewar)non-mpp


Full well:      mpp:    84ke-
                nonmpp: 84ke-

Linearity:      low level               high level(mpp)
                1 sec. 6.1 DN           678*21DN
                2 sec  12.4DN          1367*21DN
                4 sec  24.1DN          2729*21DN

QE:(%)          2/18/97
        3200A   42.2 
        3500A   44.1 
        4000A   53.1
        4500A   56.1
        5000A   67.7
        6000A   65.5
        6500A   61.1
        7000A   60.8
        8000A   48.2
        9000A   29.2
        10000A  12.1
Fringing:
        8000A   11.0%
        9000A   22.9%
       10000A   17.5%
___________________________________________________________________
History:

Dewar name:     MOS red
Uses:           MOS
Date:           Jan.4 1995 ------Jan.30,1997 tookout
CCD:            Lick3 Loral 2048x2048 Thick without Phosphor coating
                15 u-meter pixels LL3-L4-w13-0,1
Packaging:      "One point" packaging
Amp.:           A
Temperature:    

Voltages:
 Vdd=20.0 Vopg= -1  V2= 2.  Vh= 4.7 V1= 2.  Vw= 5.  Vt= 2.  R= 6.
  VR=12.0 Vsub= 0.     -8.0    -5.2    -8.0    -5.     -7.0   -2.

e-/DN:          1620/1380=1.17(AR)(in test dewar)
                1620/1157=1.40(AL)(in test dewar)
                              (AR)(in MOS RED)
                          1.16(AL)(in MOS RED)

Noise:          AR: 4.1x1.17=4.8 e-
                AL: 4.0*1.40=5.6 e-

CTE:            very good(serial)
                very good(vertical)

Traps:          33 (A direction)

Dark current:   5000sec. at -125c: 3.86e-(in test dewar)mpp
                1000sec. at -117c: 0.8 e-(in MOS red dewar)mpp
                1000sec. at -117c: 1.1 e-(in MOS red dewar)nonmpp


Full well:      mpp    
                nonmpp: 

Linearity:      1 sec. 
                2 sec 
                4 sec

QE:(%)          1/4/95
        3500A    0.7
        4000A    0.4
        4500A    4.2
        5000A   11.4
        5500A   25.1
        6000A   40.3
        6500A   43.1
        7000A   41.7
        8000A   41.6
        9000A   21.8
        10000A   5.6